Selective Patterning of p‐Type Dopants on MoS₂ via Atomic Force Microscopy‐Assisted Surface Modification

The selective patterning of gold chloride (AuCl 3 ) dopants on few‐layer molybdenum disulfide (MoS 2 ) flakes is investigated with the objective of manipulating the electrical properties of 2D material‐based devices. MoS 2 , renowned for its exceptional properties, is doped with AuCl 3 via spin coating. The removal of the dopants is achieved using contact‐mode atomic force microscopy (AFM), with control over the extent of dopant obtained by varying the AFM tip's contact force. Scanning electron microscopy and energy‐dispersive X‐ray spectroscopy confirm the patterning of the dopants. The application of this patterning method to MoS 2 ‐based field‐effect transistors results in rectified output characteristics, in contrast to the ohmic behavior observed in pristine and fully coated devices. This method offers a valuable approach for customizing MoS 2 surfaces, advancing 2D material‐based electronic devices and next‐generation semiconductor designs with tailored properties.