Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Abstract Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers’ potential energy is broken, usually, via a displacement electric field applied in double-gate devices. Here, we introduce a twistronic stack comprising both MLG and BLG, synthesized via chemical vapor deposition, showing a Bernal gap in the absence of external fields. Although a large (~30°) twist angle decouples the MLG and BLG electronic bands near Fermi level, proximity-induced energy shifts in the outermost layers result in a built-in asymmetry, which requires a displacement field of 0.14 V/nm to be compensated. The latter corresponds to a ~10 meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers.

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Publication Details

Journal
Communications Physics
Published
2024-12-01
DOI
https://doi.org/10.1038/s42005-024-01887-0
Citations
6
Primary Topic
Graphene research and applications
Type
article
Field-Weighted Citation Impact
0.70

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article

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

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6 citations
Communications Physics
Graphene research and applications
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article

Built-in Bernal gap in large-angle-twisted monolayer-bilayer graphene

Stiven Forti, Vladimir I. Fal’ko, Sergey Slizovskiy, Sergio Pezzini, Fabio Beltram, Camilla Coletti, Takashi Taniguchi, Kenji Watanabe, Antonio Rossi, Vaidotas Mišeikis, Zewdu M. Gebeyehu, Alex Boschi
article en
6 citations

Abstract

Abstract Atomically thin materials offer multiple opportunities for layer-by-layer control of their electronic properties. While monolayer graphene (MLG) is a zero-gap system, Bernal-stacked bilayer graphene (BLG) acquires a finite band gap when the symmetry between the layers’ potential energy is broken, usually, via a displacement electric field applied in double-gate devices. Here, we introduce a twistronic stack comprising both MLG and BLG, synthesized via chemical vapor deposition, showing a Bernal gap in the absence of external fields. Although a large (~30°) twist angle decouples the MLG and BLG electronic bands near Fermi level, proximity-induced energy shifts in the outermost layers result in a built-in asymmetry, which requires a displacement field of 0.14 V/nm to be compensated. The latter corresponds to a ~10 meV intrinsic BLG gap, a value confirmed by our thermal-activation measurements. The present results highlight the role of structural asymmetry and encapsulating environment, expanding the engineering toolbox for monolithically-grown graphene multilayers.

Communications PhysicsVol. 7(1)
Scuola Normale Superiore (IT), National Institute for Materials Science (JP), University of Manchester (GB), Italian Institute of Technology (IT), Henry Royce Institute (GB), Istituto Nanoscienze (IT), Center for Nanotechnology Innovation (IT)
Graphene Flagship, European Commission, Ministry of Education, Culture, Sports, Science and Technology, Ministero dell’Istruzione, dell’Università e della Ricerca, Engineering and Physical Sciences Research Council, Japan Society for the Promotion of Science, Core Research for Evolutional Science and Technology
Affordable and clean energy
Openalex Percentile: Top 29%
Graphene research and applications
0.70
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