Interfacial polarization charge engineering with co-designed LQB and EBL for enhanced EQE of AlGaN DUV LEDs

Abstract In this paper, we propose to modulate the polarization charges at the interface between the last quantum barrier (LQB) and the electron blocking layer (EBL) via strategically adjusting the Al composition in the LQB and EBL simultaneously. With appropriate design of the linear gradient profile in Al composition, the original positive polarization charges at the LQB/EBL interface can be diminished or converted into negative charges, which helps to reduce the positive electric field in EBL, thus adjusting the energy band near the LQB/EBL interface. Enhanced effective barrier height for electrons, decreased effective barrier height for holes, and accumulation of a large number of holes at the LQB/EBL interface are obtained, resulting in improved electron leakage and hole injection. In comparison with the reference deep ultraviolet light-emitting diode (DUV LED), an enhanced external quantum efficiency by 37.5% at an injection current density of 100 A cm −2 is achieved for the device with negative polarization charges. The modulation strategy of polarization charges at the LQB/EBL interface via co-designing the linear gradient of Al composition in LQB and EBL can be a feasible approach for obtaining high-performance DUV LEDs.