Thickness-dependent quasi-two-dimensional β-Ga<sub>2</sub>O<sub>3</sub> solar-blind photodetectors prepared <i>via</i> GaSe oxidation
β-Ga 2 O 3 nanosheets are prepared by GaSe oxidation, and the thickness dependence of their photodetectors are investigated. The operational stability of the devices improved by decreasing thickness.
Authors
- Kexin He
- Haoran Long (ORCID: https://orcid.org/0000-0002-2477-4137)
- Penghong Ci (ORCID: https://orcid.org/0000-0001-5949-6854)
- Juehan Yang (ORCID: https://orcid.org/0000-0002-7379-1080)
- Yue‐Yang Liu (ORCID: https://orcid.org/0000-0001-6508-4215)
- Jing Zhang (ORCID: https://orcid.org/0000-0002-4106-1622)
- Yin Hu
- Liyuan Liu (ORCID: https://orcid.org/0000-0003-2585-323X)
- Jianwen Hu
- Zhongming Wei (ORCID: https://orcid.org/0000-0002-6237-0993)
Institutions
- Chinese Academy of Sciences (CN)
- Institute of Semiconductors (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-11-29
- DOI
- https://doi.org/10.1039/d4tc04826a
- Citations
- 2
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.24
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences
- Natural Science Foundation of Beijing Municipality