A comparative analysis of structural and luminescence properties of homoepitaxially and quasi-homoepitaxially grown LuAG:Ce single crystalline films under ambient and high pressure

The work is aimed to study the structural and luminescence properties of LuAG:Ce films prepared by the LPE method on LuAG and YAG substrates in homo- and quasi-homoepitaxial growth modes, under ambient and high-pressure conditions.

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Publication Details

Journal
CrystEngComm
Published
2024-11-29
DOI
https://doi.org/10.1039/d4ce00909f
Citations
1
Primary Topic
Luminescence Properties of Advanced Materials
Type
article
Field-Weighted Citation Impact
0.12
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article

A comparative analysis of structural and luminescence properties of homoepitaxially and quasi-homoepitaxially grown LuAG:Ce single crystalline films under ambient and high pressure

A. Wierzbicka, A. Suchocki, Anton Markovskyi, Natalia Majewska et al.
1 citations
CrystEngComm
Luminescence Properties of Advanced Materials
0.12
article

A comparative analysis of structural and luminescence properties of homoepitaxially and quasi-homoepitaxially grown LuAG:Ce single crystalline films under ambient and high pressure

A. Wierzbicka, A. Suchocki, Anton Markovskyi, Natalia Majewska, Yu. Zorenko, V. Gorbenko, Yurii Syrotych, Sebastian Mahlik, T. Zorenko, M. Kamiński
article en
1 citations

Abstract

The work is aimed to study the structural and luminescence properties of LuAG:Ce films prepared by the LPE method on LuAG and YAG substrates in homo- and quasi-homoepitaxial growth modes, under ambient and high-pressure conditions.

CrystEngCommVol. 27(2)
Kazimierz Wielki University in Bydgoszcz (PL), University of Gdańsk (PL), Polish Academy of Sciences (PL)
Openalex Percentile: Top 58%
Luminescence Properties of Advanced Materials
0.12
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A comparative analysis of structural and luminescence properties of homoepitaxially and quasi-homoepitaxially grown LuAG:Ce single crystalline films under ambient and high pressure — A. Wierzbicka, A. Suchocki, et al. · CrystEngComm (2024) | TGRS Research Map | TGRS