Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge <sub>2</sub> Sb <sub>2</sub> Se <sub>4</sub> Te

Abstract Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, a systematic study elucidating the cycling failure mechanisms of Ge 2 Sb 2 Se 4 Te (GSST) is performed, a common optical PCM tailored for infrared photonic applications, in an electrothermal switching configuration commensurate with their applications in on‐chip photonic devices. Further a set of design rules building on insights into the failure mechanisms is proposed, and successfully implemented them to boost the endurance of the Ge 2 Sb 2 Se 4 Te (GSST) device to over 67 000 cycles.

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Publication Details

Journal
Advanced Optical Materials
Published
2024-11-28
DOI
https://doi.org/10.1002/adom.202402751
Citations
10
Primary Topic
Phase-change materials and chalcogenides
Type
article
Field-Weighted Citation Impact
1.17

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article

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Vladimir Liberman, Tae‐Woo Lee, Steven A. Vitale, William M. Humphreys et al.
10 citations
Advanced Optical Materials
Phase-change materials and chalcogenides
1.17
article

Understanding and Circumventing Failure Mechanisms in Chalcogenide Optical Phase Change Material Ge 2 Sb 2 Se 4 Te

Vladimir Liberman, Tae‐Woo Lee, Steven A. Vitale, William M. Humphreys, Louis Martin‐Monier, Tian Gu, Luigi Ranno, Kiumars Aryana, Carlos Rı́os, Cosmin‐Constantin Popescu, Khoi Phuong Dao, Jia Xu Brian Sia, Yifei Zhang, Hyun Jung Kim, Brian Mills, Juejun Hu, Kathleen A. Richardson, Minsoo Kang, Hyung‐Bin Bae, Dennis Calahan
article en
10 citations

Abstract

Abstract Chalcogenide optical phase change materials (PCMs) have garnered significant interest for their growing applications in programmable photonics, optical analog computing, active metasurfaces, and beyond. Limited endurance or cycling lifetime is however increasingly becoming a bottleneck toward their practical deployment for these applications. To address this issue, a systematic study elucidating the cycling failure mechanisms of Ge 2 Sb 2 Se 4 Te (GSST) is performed, a common optical PCM tailored for infrared photonic applications, in an electrothermal switching configuration commensurate with their applications in on‐chip photonic devices. Further a set of design rules building on insights into the failure mechanisms is proposed, and successfully implemented them to boost the endurance of the Ge 2 Sb 2 Se 4 Te (GSST) device to over 67 000 cycles.

Advanced Optical MaterialsVol. 13(8)
University of Central Florida (US), Langley Research Center (US), Draper Laboratory (US), Korea Advanced Institute of Science and Technology (KR), Nanyang Technological University (SG), New York State College of Ceramics (US), MIT Lincoln Laboratory (US), Alfred University (US), Massachusetts Institute of Technology (US), University of Maryland, College Park (US)
National Science Foundation, Charles Stark Draper Laboratory, Air Force Office of Scientific Research
Openalex Percentile: Top 18%
Phase-change materials and chalcogenides
1.17
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