An Application of New 3D MCP Packaging Process for Al Wire Power Devices

Traditional power devices packaging have been low package ratio, and difficult highly about the characteristic of the integrated, can't to adapt to the high integration and high density development trend in the semiconductor packaging industry; In this paper, a new design of Al wire cleaver face, can form a plane on the surface of Al wire or ribbon, realize the second die bond or wire bond on the surface of point. Through the process to achieve the idea that it can be applied to power devices of MCP packaging technology.

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Publication Details

Journal
Applied Science and Innovative Research
Published
2024-11-29
DOI
https://doi.org/10.22158/asir.v8n4p189
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
0.00
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article

An Application of New 3D MCP Packaging Process for Al Wire Power Devices

Steven C. Pan
2 links
Applied Science and Innovative Research
3D IC and TSV technologies
article

An Application of New 3D MCP Packaging Process for Al Wire Power Devices

Steven C. Pan
article en

Abstract

Traditional power devices packaging have been low package ratio, and difficult highly about the characteristic of the integrated, can't to adapt to the high integration and high density development trend in the semiconductor packaging industry; In this paper, a new design of Al wire cleaver face, can form a plane on the surface of Al wire or ribbon, realize the second die bond or wire bond on the surface of point. Through the process to achieve the idea that it can be applied to power devices of MCP packaging technology.

Applied Science and Innovative ResearchVol. 8(4)
Jiangsu University of Science and Technology (CN)
Industry, innovation and infrastructure
Openalex Percentile: Top 81%
3D IC and TSV technologies
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