A NiSe layer enhanced the efficiency of hole-conductor-free MAPbI<sub>3</sub> perovskite solar cells
The introduction of NiSe effectively reduces the defect density within the device and lowers the interfacial energy transfer barrier.
Authors
- Congcong Wu (ORCID: https://orcid.org/0000-0003-0771-2898)
- Yang Li (ORCID: https://orcid.org/0000-0002-4894-679X)
- Shiming Wang (ORCID: https://orcid.org/0000-0002-2489-4614)
- Xiandong Zhao
- Xiaohui Lu (ORCID: https://orcid.org/0009-0003-9241-4883)
- Yanyan Li (ORCID: https://orcid.org/0000-0002-0866-2135)
- Xiaojie Yang (ORCID: https://orcid.org/0000-0001-6825-3352)
- Li Zhao (ORCID: https://orcid.org/0000-0002-0919-9285)
Institutions
- Hubei University of Science and Technology (CN)
- Wuhan Textile University (CN)
- Hubei University (CN)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2024-11-29
- DOI
- https://doi.org/10.1039/d4tc03174a
- Citations
- 1
- Primary Topic
- Perovskite Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.21
Funders
- Key Technologies Research and Development Program