Self-Powered Photodetectors with High Stability Based on Se Paper/P3HT:Graphene Heterojunction

Photodetectors based on selenium (Se) have attracted significant attention because of their outstanding optoelectronic characteristics, including their rapid reactivity and high photoconductivity. However, the poor responsivity of pure Se limits their further development. In this study, a novel Se-P/P3HT:G photodetector was designed and fabricated by combining an organic semiconductor made of poly-3-hexylthiophene mixed with graphene (P3HT:G) with self-supporting Se paper (Se-P) via spin-coating process. The device possesses a dark current of around 4.23 × 10^-12 A and self-powered characteristics at 300-900 nm. At zero bias voltage and 548 nm illumination, the Se-P/P3HT:G photodetector demonstrates a maximum photocurrent of 1.35 × 10^-9 A (745% higher than that of Se-P at 0.1 V), a quick response time (16.2/27.6 ms), an on/off ratio of 292, and a maximum detectivity and responsivity of 6.47 × 10¹¹ Jones and 34 mA W^-1, respectively. Moreover, Se-P/P3HT:G exhibits superior environmental stability. After one month, the photocurrent value of the Se-P/P3HT:G device held steady at 91.4% of its initial value, and even following pre-treatment at 140 °C, the on/off ratio still remained 17 (at a retention rate of about 5.9%). The excellent thermal stability, environmental reliability, and optoelectronic performance of this heterojunction structure offer a useful pathway for the future advancement of high-performance optoelectronic devices.