Si-Backside Side-Channel Leakage Measurement and Simulation

Integrated circuit (IC) chips equipped with crypto circuits are susceptible to side-channel (SC) attacks that exploit SC information derived from the operation of the crypto circuit to reveal the secret keys. In this paper, we focus on the Si substrate voltage on the backside of the IC chip. The use of flip-chip implementations has led to the emergence of a new threat: direct probing attacks on the Si substrate. In this paper, we present a novel Si-backside voltage simulation method that extends the Chip Power Model (CPM). Furthermore, we analyze the Si-backside voltage and evaluate the SC leakage.

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Publication Details

Published
2024-08-19
DOI
https://doi.org/10.1109/isocc62682.2024.10762019
Primary Topic
Semiconductor materials and devices
Type
article
Field-Weighted Citation Impact
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Si-Backside Side-Channel Leakage Measurement and Simulation

Takuji Miki, Takuya Wadatsumi, Kazuki Monta, Rikuu Hasegawa et al.
Semiconductor materials and devices
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Si-Backside Side-Channel Leakage Measurement and Simulation

Takuji Miki, Takuya Wadatsumi, Kazuki Monta, Rikuu Hasegawa, Lang Lin, Makoto Nagata, Norman Chang, Akhilesh Kumar
article en

Abstract

Integrated circuit (IC) chips equipped with crypto circuits are susceptible to side-channel (SC) attacks that exploit SC information derived from the operation of the crypto circuit to reveal the secret keys. In this paper, we focus on the Si substrate voltage on the backside of the IC chip. The use of flip-chip implementations has led to the emergence of a new threat: direct probing attacks on the Si substrate. In this paper, we present a novel Si-backside voltage simulation method that extends the Chip Power Model (CPM). Furthermore, we analyze the Si-backside voltage and evaluate the SC leakage.

Ansys (United States) (US), Kobe University (JP)
Openalex Percentile: Top 81%
Semiconductor materials and devices
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