A bandgap reference with low TC of 1.363ppm/°C across wide temperature range for PMICs

This paper introduces the subthreshold compensation and piecewise curvature compensation techniques to eliminate the BJT-related high-order effect to achieve a low temperature coefficient (TC) in bandgap reference circuit. The cascode technique was utilized to reduce the line sensitivity (LS) by not directly connecting to the supply voltage. The circuit simulated in the 180-nm CMOS process exhibits an output voltage of 1.087V at room temperature. It has a TC of 1.363ppm/°C over the temperature range of -40 to 165°C, an LS of 0.0115%/V over the supply voltage range of 1.5V to 2.6V and a power supply rejection ratio (PSRR) of -70.7dB.

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Publication Details

Published
2024-08-19
DOI
https://doi.org/10.1109/isocc62682.2024.10762593
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
Field-Weighted Citation Impact
0.00

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article

A bandgap reference with low TC of 1.363ppm/°C across wide temperature range for PMICs

Min Ho Seo, Hongil Yoon
Advanced MEMS and NEMS Technologies
article

A bandgap reference with low TC of 1.363ppm/°C across wide temperature range for PMICs

Min Ho Seo, Hongil Yoon
article en

Abstract

This paper introduces the subthreshold compensation and piecewise curvature compensation techniques to eliminate the BJT-related high-order effect to achieve a low temperature coefficient (TC) in bandgap reference circuit. The cascode technique was utilized to reduce the line sensitivity (LS) by not directly connecting to the supply voltage. The circuit simulated in the 180-nm CMOS process exhibits an output voltage of 1.087V at room temperature. It has a TC of 1.363ppm/°C over the temperature range of -40 to 165°C, an LS of 0.0115%/V over the supply voltage range of 1.5V to 2.6V and a power supply rejection ratio (PSRR) of -70.7dB.

Yonsei University (KR)
IC Design Education Center
Openalex Percentile: Top 81%
Advanced MEMS and NEMS Technologies
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