A 16-Kb 1T1C DRAM Supporting Conventional and Compute-in-Memory Access Modes
In this paper, we propose a 16-Kb 1T1C DRAM with compute-in-memory (CIM) access mode for applying in various DRAM-based CIM applications. Unlike conventional DRAM (CD) access mode, which accesses all 64-bit data in a row over several operation cycles, the CIM access mode can access all 64-bit data in a row in just one operation cycle. This DRAM model was designed using 28-nm CMOS technology. By using the CIM access mode, memory operation achieves 8x faster compute speeds than that in CD access mode.
Authors
- Joo‐Hyung Chae (ORCID: https://orcid.org/0000-0001-6354-5612)
- Hosung Lee (ORCID: https://orcid.org/0000-0002-0535-7354)
- Jiwon Lee (ORCID: https://orcid.org/0009-0009-6529-5333)
- Hyeonjun Cheon
- Ik-Hyeon Jeon
Institutions
- Kwangwoon University (KR)
Publication Details
- Published
- 2024-08-19
- DOI
- https://doi.org/10.1109/isocc62682.2024.10762116
- Citations
- 1
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.21