Investigation of Graphene Field-Effect Transistor Behavior Using a Semiclassical Transport Model and Monte Carlo Simulations

Graphene field-effect transistors (GFETs) have emerged as a promising alternative to conventional silicon transistors due to the exceptional electronic properties of graphene. In this work, we present a detailed study of GFET modeling and simulation using the Monte Carlo method. Our objective is to develop a semiclassical transport model based on the Boltzmann transport equation (BTE) and perform simulations to study the transport characteristics and performance of GFETs under different operating conditions, considering the main scattering mechanisms in graphene. To carry out the simulations, we have developed our own Monte Carlo program in Octave, which allows us to have full control over the model parameters and adapt the simulations to our specific needs. Using this program, we study the influence of different device parameters, such as channel length and width and impurity concentration, in the electron distribution, carrier trajectories, and current-voltage characteristics of GFET, among other aspects. Our results reveal that the electron distribution becomes more uniform as the gate voltage increases, indicating a higher concentration of carriers in the channel. We observe ballistic behavior of carriers in the graphene channel, with limited scattering. Likewise, we observe a quasi-ballistic behavior of the carriers in the graphene channel, with limited dispersion.