Compact Inductor-less CMOS PAM4 VCSEL Driver for High-speed Optical Communications

A compact VCSEL driver circuit supporting PAM4 signals for high-speed communications is proposed. The proposed circuit achieves a wide bandwidth with active inductors that can supply a large amplitude voltage and an active feedback that applies strong negative feedback. The active inductor with level shift enhances high linearity in the output signal by overcoming limitations of the circuit bias conditions. This configuration without spiral inductors reduces the circuit area by 49 % compared to the circuit designed with inductive shunt peaking. The proposed circuit was fabricated in 0.18-μm CMOS technology. It operates at a bit rate of 6 Gb/s, consumes 124.2 mW, and occupies an integrated area of 0.115 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

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Publication Details

Published
2024-08-19
DOI
https://doi.org/10.1109/isocc62682.2024.10762594
Primary Topic
Semiconductor Lasers and Optical Devices
Type
article
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article

Compact Inductor-less CMOS PAM4 VCSEL Driver for High-speed Optical Communications

Makoto Nakamura, Daisuke Ito, S. Ishida, Junsei Oshika
Semiconductor Lasers and Optical Devices
article

Compact Inductor-less CMOS PAM4 VCSEL Driver for High-speed Optical Communications

Makoto Nakamura, Daisuke Ito, S. Ishida, Junsei Oshika
article en

Abstract

A compact VCSEL driver circuit supporting PAM4 signals for high-speed communications is proposed. The proposed circuit achieves a wide bandwidth with active inductors that can supply a large amplitude voltage and an active feedback that applies strong negative feedback. The active inductor with level shift enhances high linearity in the output signal by overcoming limitations of the circuit bias conditions. This configuration without spiral inductors reduces the circuit area by 49 % compared to the circuit designed with inductive shunt peaking. The proposed circuit was fabricated in 0.18-μm CMOS technology. It operates at a bit rate of 6 Gb/s, consumes 124.2 mW, and occupies an integrated area of 0.115 mm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> .

Gifu University (JP)
Affordable and clean energy
Openalex Percentile: Top 81%
Semiconductor Lasers and Optical Devices
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