Wafer-View Defect-Pattern-Prominent GDBN Method Using MetaFormer Variant

Good-Die-in-Bad-Neighborhood (GDBN) is a technique employed to identify chips that pass initial tests but may have defects. Previous research used neural networks and expanded observation windows but ignored the impact of isolated dice. This paper improves wafer pattern information through denoising and creates a lightweight model. It also reduces training time by annotating multiple dice simultaneously. Experiments on real-world datasets show the model effectively captures more Test Escapes, reducing Defective Parts Per Million (DPPM) and improving return merchandise authorization gains.

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Publication Details

Published
2024-11-03
DOI
https://doi.org/10.1109/itc51657.2024.00023
Citations
2
Primary Topic
Advanced Surface Polishing Techniques
Type
article
Field-Weighted Citation Impact
0.37
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article

Wafer-View Defect-Pattern-Prominent GDBN Method Using MetaFormer Variant

Mango C.-T. Chao, Chia-Heng Yen, Ying‐Hua Chu, Shuo-Wen Chang et al.
2 citations
Advanced Surface Polishing Techniques
0.37
article

Wafer-View Defect-Pattern-Prominent GDBN Method Using MetaFormer Variant

Mango C.-T. Chao, Chia-Heng Yen, Ying‐Hua Chu, Shuo-Wen Chang, S. Li, Kai–Chiang Wu
article en
2 citations

Abstract

Good-Die-in-Bad-Neighborhood (GDBN) is a technique employed to identify chips that pass initial tests but may have defects. Previous research used neural networks and expanded observation windows but ignored the impact of isolated dice. This paper improves wafer pattern information through denoising and creates a lightweight model. It also reduces training time by annotating multiple dice simultaneously. Experiments on real-world datasets show the model effectively captures more Test Escapes, reducing Defective Parts Per Million (DPPM) and improving return merchandise authorization gains.

National Yang Ming Chiao Tung University (TW), Taiwan Semiconductor Manufacturing Company (Taiwan) (TW)
Openalex Percentile: Top 42%
Advanced Surface Polishing Techniques
0.37
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