Bi[Se‐(2‐Me₂NC₆H₄)]₃: Single Source Precursor for Preparing Pure‐Phase, 2‐Dimensional Bismuth Selenide Films

Abstract Chemical vapor deposition using molecular compounds is a salient method to achieve high‐quality, uniform films comprising two‐dimensional flakes. In this communication, we present the synthesis and characterization of analytically pure single crystals of Bi[Se‐(2‐Me 2 NC 6 H 4 )] 3, used as a single source precursor to grow thin films of bismuth selenide. The structural and morphological studies of the films were performed using powder X‐ray diffraction, Raman spectroscopy, scanning, and transmission electron microscopy, revealing a pure phase stoichiometry with two‐dimensional flakes of quintuple layers grown on glass, Si, and sapphire substrates. The deposited films on the glass surface show a near‐ideal Bi to Se stoichiometry of 1.84 and exhibit an ambient temperature resistivity of 30 mΩ.cm. When unevenly illuminated with a laser of 532 nm wavelength, it shows a photo‐thermoelectric (PTE) voltage generation with a response time of 2 seconds and an estimated Seebeck coefficient value of −128±6.6 μV/K, thus demonstrating its suitability for device applications in IoTs.