Controllable Synthesis of High-Quality Magnetic Topological Insulator MnBi<sub>2</sub>Te<sub>4</sub> and MnBi<sub>4</sub>Te<sub>7</sub> Multilayers by Chemical Vapor Deposition

With a nontrivial topological band and intrinsic magnetic order, two-dimensional (2D) MnBi<sub>2</sub>Te<sub>4</sub>-family materials exhibit great promise for exploring exotic quantum phenomena and potential applications. However, the synthesis of 2D MnBi<sub>2</sub>Te<sub>4</sub>-family materials via chemical vapor deposition (CVD), which is essential for advancing device applications, still remains a significant challenge since it is difficult to control the reactions among multi-precursors and form pure phases. Here, we report a controllable synthesis of high-quality magnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub> and MnBi<sub>4</sub>Te<sub>7</sub> multilayers via an evaporation-rate-controlled CVD approach. The multilayers are grown on a mica substrate epitaxially, exhibiting a regular triangle shape. By controlling growth temperatures, the thickness and lateral size of the 2D MnBi<sub>2</sub>Te<sub>4</sub> are well regulated. Furthermore, the magneto-transport measurements clearly reveal multistep spin-flop transitions for both odd- and even-number-layered MnBi<sub>2</sub>Te<sub>4</sub> multilayers. Our study marks a significant stride toward future transformative applications in devices based on high-quality, edge- and thickness-controlled 2D magnetic topological quantum materials.

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Publication Details

Journal
Nano Letters
Published
2024-11-28
DOI
https://doi.org/10.1021/acs.nanolett.4c04700
Citations
8
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
2.70

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article

Controllable Synthesis of High-Quality Magnetic Topological Insulator MnBi2Te4 and MnBi4Te7 Multilayers by Chemical Vapor Deposition

Fang Jiao, Xiaotian Bao, Hui Guo, Lihong Bao, Guojing Hu, Guangtong Liu, Zhaoyi Zhai, Chenyu Bai, Senhao Lv, Jiadong Zhou, Hong‐Jun Gao, Yechao Han, Hui Chen, Xinfeng Liu, Ke Zhu, Wu Zhou, Xiao Lin, Jingyuan Qu, Guoyu Xian, Qi Qi, Haitao Yang
article en
8 citations

Abstract

With a nontrivial topological band and intrinsic magnetic order, two-dimensional (2D) MnBi<sub>2</sub>Te<sub>4</sub>-family materials exhibit great promise for exploring exotic quantum phenomena and potential applications. However, the synthesis of 2D MnBi<sub>2</sub>Te<sub>4</sub>-family materials via chemical vapor deposition (CVD), which is essential for advancing device applications, still remains a significant challenge since it is difficult to control the reactions among multi-precursors and form pure phases. Here, we report a controllable synthesis of high-quality magnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub> and MnBi<sub>4</sub>Te<sub>7</sub> multilayers via an evaporation-rate-controlled CVD approach. The multilayers are grown on a mica substrate epitaxially, exhibiting a regular triangle shape. By controlling growth temperatures, the thickness and lateral size of the 2D MnBi<sub>2</sub>Te<sub>4</sub> are well regulated. Furthermore, the magneto-transport measurements clearly reveal multistep spin-flop transitions for both odd- and even-number-layered MnBi<sub>2</sub>Te<sub>4</sub> multilayers. Our study marks a significant stride toward future transformative applications in devices based on high-quality, edge- and thickness-controlled 2D magnetic topological quantum materials.

Nano LettersVol. 24(49)
Beijing Institute of Technology (CN), Chinese Academy of Sciences (CN), National Center for Nanoscience and Technology (CN), Institute of Physics (CN), National Laboratory for Superconductivity (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, Chinese Academy of Sciences, National Key Research and Development Program of China
Openalex Percentile: Top 9%
Topological Materials and Phenomena
2.70
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