Plasma Treatment Induced Charge Transfer for Realization of Negative Differential Transconductance in Van Der Waals Single‐Channel

Abstract For upcoming AI computing era, the multi‐valued logic (MVL) is promising for processing multiple information with high‐density device. Particularly, the negative differential transconductance (NDT) devices as element of MVL have been needed to overcome complicated heterostructures with multiple stacking process. Herein, the single‐channel device is developed with NDT phenomenon through plasma treatment in van der Waals (vdW) transistor. The O 2 plasma treatment formed amorphous oxidation layer capable of charge transfer on vdW materials. Through O 2 plasma treatment on single‐channel, the NDT phenomenon is implemented by forming the multiple V TH in single‐channel electrical curve due to charge transfer p ‐doping effect. The peak‐to‐valley current ratio (PVCR) of NDT phenomenon is achieved to 10 2 . Furthermore, ternary inverter is demonstrated in single‐channel combined with NDT and load device. Finally, by implementing NDT peak in single‐channel transistor, the complexity and size of MVL circuit is reduced, moving away multiple heterostructure.