High-Entropy Rock-Salt Surface Layer Stabilizes the Ultrahigh-Ni Single-Crystal Cathode
Single-crystalline Ni-rich layered oxides are one of the most promising cathode materials for lithium-ion batteries due to their superior structural stability. However, sluggish lithium-ion diffusion kinetics and interfacial issues hinder their practical applications. These issues intensify with increasing Ni content in the ultrahigh-Ni regime (≥90%), significantly threatening the practical viability of the single-crystalline strategy for ultrahigh-Ni layered oxide cathodes. Herein, by developing a high-entropy coating strategy, we successfully constructed an epitaxial lattice-coherent high-entropy rock-salt layer (∼3 nm) via Zr and Al doping on the surface of the single-crystalline cathode LiNi<sub>0.92</sub>Co<sub>0.05</sub>Mn<sub>0.03</sub>O<sub>2</sub> through an <i>in situ</i> modification process. The surface high-entropy rock-salt layer with tailored Ni valence and lattice coherence not only greatly improves lithium-ion diffusion kinetics but also suppresses interface parasitic reactions and surface structural degradations. The high-entropy surface layer-stabilized ultrahigh-Ni single-crystalline cathode (SC-Ni92-ZA) demonstrates significantly improved rate and cycling performances (127.5 mAh g<sup>-1</sup> at 20C, capacity retention of 74.9% after 500 cycles at 1C) in a half-cell. The SC-Ni92-ZA exhibits a capacity retention of 87.1% after 600 cycles at 1C in a full-cell. This epitaxial lattice-coherent high-entropy coating strategy develops a promising avenue for developing high-capacity, long-life cathode materials.
Authors
- Xinghan Chen (ORCID: https://orcid.org/0000-0002-7013-3920)
- Zhihai Gao
- Zhongxing Xu (ORCID: https://orcid.org/0000-0003-3815-7647)
- Minzhi Zhan (ORCID: https://orcid.org/0000-0001-7574-7852)
- Yongzhi Liang (ORCID: https://orcid.org/0000-0001-5585-9347)
- Wenguang Fan (ORCID: https://orcid.org/0000-0002-4200-606X)
- Feng Ming Pan (ORCID: https://orcid.org/0000-0002-8216-1339)
- Xulin Mu
- Xinghua Tan (ORCID: https://orcid.org/0009-0005-3812-533X)
- Haoyu Xue (ORCID: https://orcid.org/0009-0001-7510-730X)
- Xiaohu Wang (ORCID: https://orcid.org/0000-0001-9062-5415)
- Jiajie Liu (ORCID: https://orcid.org/0009-0009-0850-7002)
- Hongbin Cao
Institutions
- Sun Yat-sen University (CN)
- Shanghai Jiao Tong University (CN)
- Chinese Academy of Sciences (CN)
- Peking University (CN)
Publication Details
- Journal
- ACS Nano
- Published
- 2024-11-28
- DOI
- https://doi.org/10.1021/acsnano.4c13911
- Citations
- 55
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 11.48
Funders
- Basic and Applied Basic Research Foundation of Guangdong Province