Self-Heating-Based channel thermal noise of advanced Sub-5-nm-Node nanosheet FET

• Investigation of thermal noise characteristics of nanosheet gate-all-around (GAA) field-effect transistors (FET) • Analysis of self-heating effects in relation with thermal noise properties. • Accurate extraction of device parameters (mobility, capacitance, lattice temperature) • Evaluation of high-frequency performance in terms of cut-off frequency and signal-to-noise ratio. In this paper, the self-heating effect and channel thermal noise (S id ) in stacked nanosheet gate-all-around (GAA) field effect transistor (FET) are investigated and discussed. In order to calculate channel thermal noise in radio-frequency (RF) operation, various factors such as electron mobility, temperature, and the gate capacitance is extracted through simulation. In addition, the channel length modulation (CLM) effect is analyzed to estimate the gate length, which is one of the important factors in obtaining S id . After that, S id is calculated, depending on the channel width (T w ) of the nanosheet FET. Then, the dependency of the signal to noise ratio (SNR) on T w is addressed. Based on the findings of this work, relevant guidelines on T w specification are discussed in terms of both S id and SNR.