Process Mechanics Model and Asymmetric Residual Stress Analysis During 3-D NAND Manufacturing
The advent of 3-D NAND architecture has introduced new integration challenges, particularly regarding the impact of thermal-mechanical stress during manufacturing, which significantly affects device performance. This study establishes a 3-D NAND flash memory process mechanics model using a local representative volume element (RVE) finite element modeling framework. We thoroughly analyze the causes of warpage during the 3-D NAND manufacturing process and monitor the evolution of mechanical stress and related structural deformations. Additionally, we examine the deformation distribution under sequential processes and investigate how different process conditions impact asymmetric deformation. Our findings have potential significance for improving device structure reliability and optimizing process parameters in 3-D NAND memory manufacturing. By providing insights into stress evolution and deformation mechanisms, this work contributes to addressing the challenges associated with increasing storage density in 3-D NAND technology.
Authors
- Zhiqiang Tian (ORCID: https://orcid.org/0000-0002-3669-3748)
- Gang Zhang (ORCID: https://orcid.org/0000-0003-4305-2567)
- Sheng Liu (ORCID: https://orcid.org/0000-0001-6033-078X)
- Yuhua Huang (ORCID: https://orcid.org/0000-0003-4191-9972)
- Shizhao Wang (ORCID: https://orcid.org/0000-0001-7267-5240)
Institutions
- Wuhan University (CN)
- Fuzhou University (CN)
Publication Details
- Journal
- IEEE Transactions on Electron Devices
- Published
- 2024-11-27
- DOI
- https://doi.org/10.1109/ted.2024.3496435
- Citations
- 1
- Primary Topic
- Advanced Surface Polishing Techniques
- Type
- article
- Field-Weighted Citation Impact
- 0.18
Funders
- National Key Research and Development Program of China