A high-performance 380 GHz GaAs Schottky diode based mixer and frequency doubler for terahertz receiver front-ends

This paper presents on the design, fabrication and test of a Schottky diode based mixer driving by a frequency doubler for solid-state receiver front-ends in the 380 GHz range. The 380 GHz sub-harmonic mixer has fabricated with the GaAs membrane process on a 3 μm-thick substrate suspended in a waveguide with metal beamleads, and exhibited an impressive double-side-band conversion loss of less than 10 dB in 1-23 GHz IF band with the optimal conversion loss of merely 6.4 dB. The 190 GHz frequency doubler based on Schottky diodes is the key in the local oscillator source and sufficiently pumps the mixer with 2~5 mW of input power.

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Publication Details

Journal
IEICE Electronics Express
Published
2024-11-27
DOI
https://doi.org/10.1587/elex.21.20240624
Citations
1
Primary Topic
Superconducting and THz Device Technology
Type
article
Field-Weighted Citation Impact
0.33
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article

A high-performance 380 GHz GaAs Schottky diode based mixer and frequency doubler for terahertz receiver front-ends

Nan Wu, Jingtao Zhou, Zhi Jin
1 citations
IEICE Electronics Express
Superconducting and THz Device Technology
0.33
article

A high-performance 380 GHz GaAs Schottky diode based mixer and frequency doubler for terahertz receiver front-ends

Nan Wu, Jingtao Zhou, Zhi Jin
article en
1 citations

Abstract

This paper presents on the design, fabrication and test of a Schottky diode based mixer driving by a frequency doubler for solid-state receiver front-ends in the 380 GHz range. The 380 GHz sub-harmonic mixer has fabricated with the GaAs membrane process on a 3 μm-thick substrate suspended in a waveguide with metal beamleads, and exhibited an impressive double-side-band conversion loss of less than 10 dB in 1-23 GHz IF band with the optimal conversion loss of merely 6.4 dB. The 190 GHz frequency doubler based on Schottky diodes is the key in the local oscillator source and sufficiently pumps the mixer with 2~5 mW of input power.

IEICE Electronics ExpressVol. 22(2)
Chinese Academy of Sciences (CN), Institute of Microelectronics (SG), University of Chinese Academy of Sciences (CN)
Affordable and clean energy
Openalex Percentile: Top 33%
Superconducting and THz Device Technology
0.33
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A high-performance 380 GHz GaAs Schottky diode based mixer and frequency doubler for terahertz receiver front-ends — Nan Wu, Jingtao Zhou, et al. · IEICE Electronics Express (2024) | TGRS Research Map | TGRS