Design and Growth of P-Type AlGaN Graded Composition Superlattice
A graded composition superlattice structure is proposed by combining simulation with experimentation. The structural factors affecting graded symmetric superlattices and graded asymmetric superlattices and their action modes are simulated and analyzed. A Mg-doped graded symmetric superlattice structure with high Al content, excellent structural quality, good surface morphology and excellent electrical properties was grown by MOCVD equipment. The Al<sub>x</sub>Ga<sub>1-x</sub>N superlattice with Al composition of 0.7 in the barrier exhibits a hole concentration of approximately 5 × 10<sup>15</sup> cm<sup>-3</sup> and a resistivity of 66 Ω·cm.
Authors
- Bo Yang (ORCID: https://orcid.org/0000-0001-6781-1850)
- Xiaowei Zhou (ORCID: https://orcid.org/0000-0002-3667-9962)
- Yang Liu (ORCID: https://orcid.org/0000-0003-3240-2875)
- Peixian Li (ORCID: https://orcid.org/0000-0001-5926-8755)
- Zhuang Zhao (ORCID: https://orcid.org/0000-0001-8974-7757)
- Yingru Xiang
- Junchun Bai
- Xue Yang (ORCID: https://orcid.org/0009-0009-8165-7832)
Institutions
- Xidian University (CN)
Publication Details
- Journal
- Micromachines
- Published
- 2024-11-26
- DOI
- https://doi.org/10.3390/mi15121420
- Citations
- 4
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 1.24
Funders
- National Key Research and Development Program of China