Amorphous GaOx Thin Films Grown by MOCVD for Broadband Ultraviolet Absorption Application
Abstract Gallium oxide (Ga₂O₃), with its wide bandgap of 4.3–5.4 eV and tunable properties, holds great potential for applications in power electronics, solar‐blind photodetectors (PDs), and transparent conductive oxides, particularly effective in the 230–280 nm range for solar‐blind detectors. In contrast, amorphous gallium oxide (a‐GaOx) is gaining attention for UV PDs and flexible X‐ray detectors due to its straightforward synthesis. However, its effective utilization requires a deeper understanding of its chemical, structural, and optical properties. In this study, a‐GaOx is synthesized using metal–organic chemical vapor deposition (MOCVD) at a reduced oxygen flow rate. X‐ray photoelectron spectroscopy revealed that Ga₂O can constitute over 30% of the thin film at high trimethylgallium (TMGa) flux, coexisting with Ga₂O₃ and exhibiting an optical bandgap ≈3.3 eV. Notably, a metal‐semiconductor‐metal photodetector fabricated from this a‐GaOx thin film demonstrated potential as a novel broadband ultraviolet (BUV) absorption material, effectively covering the 254 to 360 nm range.
Authors
- Qi Song (ORCID: https://orcid.org/0000-0002-1167-871X)
- Hanzhao Song
- Weihua Tang (ORCID: https://orcid.org/0000-0002-7539-9322)
- Chee‐Keong Tan (ORCID: https://orcid.org/0000-0002-1776-4491)
- Chuang Zhang (ORCID: https://orcid.org/0000-0003-3709-8294)
- Zengxia Mei (ORCID: https://orcid.org/0000-0002-2034-659X)
- Jiahe Cao (ORCID: https://orcid.org/0009-0000-2992-1565)
- Yimin Liao (ORCID: https://orcid.org/0009-0002-3074-7941)
- Guofeng Hu (ORCID: https://orcid.org/0000-0001-5246-7874)
- Z. L. Xie (ORCID: https://orcid.org/0009-0009-7960-4360)
- Andeng Qu
- Jierui Xue
- Yan Wang (ORCID: https://orcid.org/0000-0002-7834-7499)
Institutions
- Beijing University of Posts and Telecommunications (CN)
- Hong Kong University of Science and Technology (HK)
- Nanjing University of Posts and Telecommunications (CN)
- Songshan Lake Materials Laboratory (CN)
- Guangzhou Municipal Engineering Design and Research Institute (CN)
- University of Hong Kong (HK)
Publication Details
- Journal
- Advanced Materials Technologies
- Published
- 2024-11-27
- DOI
- https://doi.org/10.1002/admt.202401215
- Citations
- 5
- Primary Topic
- Ga2O3 and related materials
- Type
- article
- Field-Weighted Citation Impact
- 0.59
Funders
- State Administration of Foreign Experts Affairs
- Guangzhou Municipal Science and Technology Project