Operation of Si field emitter arrays in an N2 environment

Field Emitter Arrays (FEAs) have the potential to operate at high power, high frequencies, and endure harsh environments. However, vacuum packaging these devices poses a challenge due to the sensitivity of the emission phenomena to the surface properties of the cathode, such as the work function and the tip radius. Studying the effect of different residual gases on FEAs can enhance our understanding of the interaction between the emission surface and the environment and help estimate the permissible amount of residual gases within the package. In this study, the effect of N 2 exposure on 500 × 500 Silicon Field Emitter Arrays (Si-FEAs) was investigated. The device was exposed to 10 000 Langmuir (L) of N 2 at 10 −7 Torr. During the exposure, the anode current increased from 4.7 μA to 16 μA. However, this enhancement in current was temporary, and upon closing the leak valve, the anode current gradually returned to the pre-exposure level. No significant change in current was observed when the device was powered off during N 2 exposure. The extent of current enhancement showed a direct relationship with the partial pressure of N 2 . These results suggest that the presence of N 2 in a vacuum package does not degrade the performance of Si-FEAs. • Si-FEA emission current increased significantly in an N 2 environment. • The changes on the Si-FEA emission current happens only when the device is on and the changes are reversible. • O 2 partial pressure, compared to N 2 and Ar, limits Si-FEA lifetime.