Inverse design of narrowband thermal emitter with tandem films structures using simulated annealing algorithm

An inverse design method of narrow-band thermal emitter with a tandem films structures is proposed here, which is accomplished by the simulated annealing algorithm. Using this method, two kinds of structures are designed, which peak absorption rate is 0.8261 at 5.34 μm with a Q -factor of 175, and 0.8931 at 3.56 μm with a Q -factor of 132. The electric field distribution within the structure is analyzed using the finite-difference time-domain method (FDTD), and behavior similar to a Tamm plasmon state. The simulation and experiment of the inverse design method shows good agreement. Such inverse design method is very promising in mid-infrared simulator and detection.