Revisiting the analytical solution of spin-orbit torque switched nanoscale perpendicular ferromagnets

The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show a large discrepancy with experiments in studying the spin-orbit torque switching of the perpendicular magnet. In this work, we observed that the trajectory of magnetization shows a smooth transition during the switching. This contradicts the magnetization dynamics proposed in previous models, which suggest that magnetization first aligns with the spin polarization (\ensuremath{\sigma}) before switching can occur. We demonstrate that aligning magnetization to \ensuremath{\sigma} requires a very large current, resulting in the unsatisfactory fitting between the previous models and experiments. In contrast, the smooth transition permits a lower switching current. Guided by this refined physical picture, we pinpoint the reversal of precession chirality as a pivotal factor for achieving deterministic switching. This insight contributes to the development of an analytical model that shows good alignment with the experimental data. We offer a clearer understanding of the current-induced magnetization switching process, which will benefit the advancements in spin-orbit torque magnetic random-access memory.

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Publication Details

Journal
Physical review. B./Physical review. B
Published
2024-11-26
DOI
https://doi.org/10.1103/physrevb.110.184428
Citations
5
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
1.69

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article

Revisiting the analytical solution of spin-orbit torque switched nanoscale perpendicular ferromagnets

Zhifeng Zhu, Zhengde Xu, Xue Zhang
5 citations
Physical review. B./Physical review. B
Magnetic properties of thin films
1.69
article

Revisiting the analytical solution of spin-orbit torque switched nanoscale perpendicular ferromagnets

Zhifeng Zhu, Zhengde Xu, Xue Zhang
article en
5 citations

Abstract

The scaling of magnetic memory into nanometer size calls for a theoretical model to accurately predict the switching current. Previous models show a large discrepancy with experiments in studying the spin-orbit torque switching of the perpendicular magnet. In this work, we observed that the trajectory of magnetization shows a smooth transition during the switching. This contradicts the magnetization dynamics proposed in previous models, which suggest that magnetization first aligns with the spin polarization (\ensuremath{\sigma}) before switching can occur. We demonstrate that aligning magnetization to \ensuremath{\sigma} requires a very large current, resulting in the unsatisfactory fitting between the previous models and experiments. In contrast, the smooth transition permits a lower switching current. Guided by this refined physical picture, we pinpoint the reversal of precession chirality as a pivotal factor for achieving deterministic switching. This insight contributes to the development of an analytical model that shows good alignment with the experimental data. We offer a clearer understanding of the current-induced magnetization switching process, which will benefit the advancements in spin-orbit torque magnetic random-access memory.

Physical review. B./Physical review. BVol. 110(18)
ShanghaiTech University (CN), Shanghai Institute of Microsystem and Information Technology (CN), University of Chinese Academy of Sciences (CN)
National Natural Science Foundation of China, National Key Research and Development Program of China
Affordable and clean energy
Openalex Percentile: Top 15%
Magnetic properties of thin films
1.69
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