Enhancing the optical and electrical performance of a micro-LED with GaN substrate by optimizing structural parameters

In this study, the impact of structural parameters on the optical and electrical performance of a micro-LED based on GaN substrate is evaluated through simulation. The adjusted structural parameters include Al content in the Al <i>_x</i> Ga <i>_1-x</i> N electron blocking layer (EBL), In content in the In <i>_y</i> Ga <i>_1-y</i> N quantum well (QW) layers, and the QW period. The results indicate that lower Al content in the EBL increases the radiative recombination rate in QWs, leading to higher quantum efficiency and output power. The effect of varying In content in the QWs on the recombination process of the device is discussed. Additionally, it was found that a shorter QW period in the active region could achieve lower power consumption and higher luminous brightness and efficiency. These findings enhance the understanding of GaN substrate-based Micro-LEDs and provide important guidance for optimizing and designing high-performance GaN substrate Micro-LEDs.