Retention Improvement in Vertical NAND Flash Memory Using Electron Back-Tunneling
We propose an electron back-tunneling (EBT) method to enhance the retention characteristics of vertical NAND (V-NAND) flash memory. The storage of back-tunneled electrons in the spacer region between adjacent cells is facilitated by the synergistic effect of the fringing electric field between adjacent word-lines. By applying a single EBT pulse before the program operation in V-NAND flash memory, electrons can be stored in all spacer regions between the cells simultaneously. The electrons stored in the spacer prevent lateral movement of cell electrons, thereby improving the retention characteristics by up to 61%.
Authors
- Yeongheon Yang (ORCID: https://orcid.org/0009-0004-3117-0528)
- Ryun‐Han Koo (ORCID: https://orcid.org/0000-0002-5708-3308)
- Jonghyun Ko (ORCID: https://orcid.org/0000-0001-5641-2352)
- Joonhyung Cho (ORCID: https://orcid.org/0000-0001-6823-6456)
- Jiseong Im (ORCID: https://orcid.org/0000-0002-7260-9224)
- Jong-Won Back
- Ho-Nam Yoo (ORCID: https://orcid.org/0000-0003-0324-9912)
- Sungho Park (ORCID: https://orcid.org/0000-0001-7416-1059)
- Jong‐Ho Lee (ORCID: https://orcid.org/0000-0003-3559-9802)
Institutions
- SK Group (South Korea) (KR)
- Seoul National University (KR)
Publication Details
- Journal
- IEEE Electron Device Letters
- Published
- 2024-11-26
- DOI
- https://doi.org/10.1109/led.2024.3506507
- Citations
- 9
- Primary Topic
- Advanced Data Storage Technologies
- Type
- article
- Field-Weighted Citation Impact
- 3.14
Funders
- SK Hynix
- Seoul National University
- Ministry of Science and ICT, South Korea