Compact Reconfigurable Dual-Band MMIC SPDT/SP4T Switches With On-Chip Coupled-Line Structure in GaN-on-SiC HEMT Technology

This paper presents the design and analysis of dual-band monolithic microwave integrated circuit (MMIC) switches, including a single pole double throw (SPDT) and a single pole four throw (SP4T). With a novel on-chip coupled-line (OCL) topology, the input signal can be switched into low- or high-band paths to create dual-band characteristics. By carefully selecting the electrical lengths of OCLs and device size for corresponding shunt-FETs, the operating frequencies for low- and high-bands can be determined. This brings about improved insertion loss (IL) and isolation (ISO) in a compact structure. With the proposed techniques, two switch prototypes have been designed and fabricated in a 0.25-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m GaN-on-SiC process for high-power capability. The SPDT consists of a low-band path and a high-band path. It achieves an average IL/ISO of 1.0/32 dB with the best input 1-dB compression points (IP1dB) of 37.2 dBm at a low-band of DC-15 GHz; and an average IL/ISO of 2.0/28.5 dB with the best IP1dB of 32.8 dBm at a high-band of 20-40 GHz, respectively. The return loss is better than 11 dB for each port. The SP4T achieves a fully integrated dual-band transmit/receive (T/R) switch with doubled low-/high-band paths. It shows an average IL/ISO of 2.26/27.5 dB with the best IP1dB of 31.2 dBm at a low-band of 5-15 GHz; and an average IL/ISO of 2.7/26.5 dB with the best IP1dB of 30 dBm at a high-band of 20-30 GHz have been achieved, respectively. Better than 11.3 dB return loss is obtained for each port. The chip sizes are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.8\times 0.9$ </tex-math></inline-formula> mm2 for the SPDT and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.2\times 1.7$ </tex-math></inline-formula> mm2 for the SP4T.

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Publication Details

Journal
IEEE Transactions on Circuits and Systems I Regular Papers
Published
2024-11-26
DOI
https://doi.org/10.1109/tcsi.2024.3504273
Citations
8
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
2.49

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article

Compact Reconfigurable Dual-Band MMIC SPDT/SP4T Switches With On-Chip Coupled-Line Structure in GaN-on-SiC HEMT Technology

Si‐Ping Gao, Baoguo Yang, Yan Xu, Jingyuan Zhang et al.
8 citations
IEEE Transactions on Circuits and Systems I Regular Papers
GaN-based semiconductor devices and materials
2.49
article

Compact Reconfigurable Dual-Band MMIC SPDT/SP4T Switches With On-Chip Coupled-Line Structure in GaN-on-SiC HEMT Technology

Si‐Ping Gao, Baoguo Yang, Yan Xu, Jingyuan Zhang, Yong‐Xin Guo
article en
8 citations

Abstract

This paper presents the design and analysis of dual-band monolithic microwave integrated circuit (MMIC) switches, including a single pole double throw (SPDT) and a single pole four throw (SP4T). With a novel on-chip coupled-line (OCL) topology, the input signal can be switched into low- or high-band paths to create dual-band characteristics. By carefully selecting the electrical lengths of OCLs and device size for corresponding shunt-FETs, the operating frequencies for low- and high-bands can be determined. This brings about improved insertion loss (IL) and isolation (ISO) in a compact structure. With the proposed techniques, two switch prototypes have been designed and fabricated in a 0.25-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m GaN-on-SiC process for high-power capability. The SPDT consists of a low-band path and a high-band path. It achieves an average IL/ISO of 1.0/32 dB with the best input 1-dB compression points (IP1dB) of 37.2 dBm at a low-band of DC-15 GHz; and an average IL/ISO of 2.0/28.5 dB with the best IP1dB of 32.8 dBm at a high-band of 20-40 GHz, respectively. The return loss is better than 11 dB for each port. The SP4T achieves a fully integrated dual-band transmit/receive (T/R) switch with doubled low-/high-band paths. It shows an average IL/ISO of 2.26/27.5 dB with the best IP1dB of 31.2 dBm at a low-band of 5-15 GHz; and an average IL/ISO of 2.7/26.5 dB with the best IP1dB of 30 dBm at a high-band of 20-30 GHz have been achieved, respectively. Better than 11.3 dB return loss is obtained for each port. The chip sizes are <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.8\times 0.9$ </tex-math></inline-formula> mm2 for the SPDT and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.2\times 1.7$ </tex-math></inline-formula> mm2 for the SP4T.

IEEE Transactions on Circuits and Systems I Regular PapersVol. 72(3)
National University of Singapore (SG), City University of Hong Kong (HK), Shanghai Institute of Measurement and Testing Technology (CN), Nanjing University of Aeronautics and Astronautics (CN)
Science and Technology Support Program of Jiangsu Province
Affordable and clean energy
Openalex Percentile: Top 10%
GaN-based semiconductor devices and materials
2.49
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