Production and electronic transport in thin films of strontium iridate
The results of the study of epitaxial thin films of SrIrO3 are presented, data on growth technology, crystal structure and electronic transport are presented. In SrIrO3 films received in a mixture of Ar and O2 gases, the dependence of resistance on temperature has a metallic character. For the films deposited in pure argon, the resistance versus temperature curves shows both a metallic and a dielectric behavior. It depends on the deposition pressure and the deposition temperature. The activation energy was calculated for dielectric samples and compared with the activation energy for Sr2IrO4 films.
Authors
- G. A. Ovsyannikov (ORCID: https://orcid.org/0000-0002-9023-7049)
- A. M. Petrzhik (ORCID: https://orcid.org/0000-0003-3811-1980)
- Yu. V. Kislinskiĭ
- A. V. Shadrin (ORCID: https://orcid.org/0000-0002-1536-6190)
- I. E. Moskal
- N. V. Dubitskiy (ORCID: https://orcid.org/0009-0003-1723-8103)
Institutions
- Moscow Institute of Physics and Technology (RU)
- Moscow Power Engineering Institute (RU)
- MIREA - Russian Technological University (RU)
- Kotelnikov Institute of Radioengineering and Electronics of the Russian Academy of Sciences (RU)
- Moscow Aviation Institute (RU)
Publication Details
- Journal
- Известия Российской академии наук Серия физическая
- Published
- 2024-11-26
- DOI
- https://doi.org/10.31857/s0367676524040211
- Primary Topic
- Advanced Condensed Matter Physics
- Type
- article
- Field-Weighted Citation Impact
- 0.00