253 GHz <i>f</i><sub>T</sub> Graded‐Channel AlGaN/GaN High‐Electron‐Mobility Transistors with New Cliff Barrier for Millimeter Wave High‐Frequency Applications
In this research work, a graded‐channel AlGaN/GaN high‐electron‐mobility transistor (HEMT) featuring a cliff AlGaN barrier with a gate length of 60 nm is investigated. The inclusion of a foot cliff barrier layer confines the 3DEG distribution, thereby reducing electron scattering and potentially improving carrier mobility. The cliff‐graded‐channel device shows a peak cutoff frequency f T of 253 GHz and power‐added efficiency of 68% at 30 GHz, which represents a significant 60% improvement in comparison with conventional graded‐channel devices. These results clearly indicate that the graded‐channel AlGaN/GaN HEMT with a new cliff barrier design has great potential for mmW applications.
Authors
- S. Angen Franklin (ORCID: https://orcid.org/0009-0002-8834-4619)
- D. Nirmal (ORCID: https://orcid.org/0000-0002-9751-2816)
- S. Rani (ORCID: https://orcid.org/0000-0003-3233-6564)
- Binola K Jebalin. I.V (ORCID: https://orcid.org/0000-0002-9101-6889)
- Subhash Chander (ORCID: https://orcid.org/0000-0001-9796-2772)
Institutions
- Karunya University (IN)
- Solid State Physics Laboratory (IN)
Publication Details
- Journal
- physica status solidi (a)
- Published
- 2024-11-26
- DOI
- https://doi.org/10.1002/pssa.202400552
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.93
Funders
- Defence Research and Development Organisation