ELECTRON BEAM EVAPORATION OF SILICON CARBIDE TO PRODUCE SILICON-CARBON COATINGS
In this paper, we describe our work on the formation of silicon-carbon (Si-C) coatings by electron beam evaporation of a silicon carbide target in a medium vacuum using a forevacuum-pressure plasma-cathode electron source. The films obtained were characterized, which showed that the properties of the Si-C coatings were similar to those prepared by plasma-chemical methods.
Authors
- I. Yu. Bakeev (ORCID: https://orcid.org/0000-0001-6807-3757)
- Victor A. Burdovitsin (ORCID: https://orcid.org/0000-0003-1645-6136)
- Ефим Михайлович Окс (ORCID: https://orcid.org/0000-0002-9323-0686)
- A.V. Tyunkov (ORCID: https://orcid.org/0000-0001-9742-9636)
- L.J. Ngon
- A. Kiki
Institutions
- Tomsk State University of Control Systems and Radio-Electronics (RU)
- Institute of High Current Electronics (RU)
Publication Details
- Journal
- High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes
- Published
- 2024-11-26
- DOI
- https://doi.org/10.1615/hightempmatproc.v29.i1.10
- Citations
- 3
- Primary Topic
- Diamond and Carbon-based Materials Research
- Type
- article
- Field-Weighted Citation Impact
- 0.35