Improved mobility in InAs nanowire FETs with sulfur-based surface treatment

InAs exhibits high electron mobility , positioning it as a promising candidate for advanced nanoelectronic device materials. Specifically, nanowire structures are particularly advantageous for electronic device applications, offering benefits such as reduced leakage current and minimized short-channel effects due to their distinctive one-dimensional electron transport characteristics. However, the large surface-to-volume ratio of the nanowires not only significantly degrades their electrical properties but also complicates the formation of semiconductor-metal ohmic contacts . In this study, surface treatments involving sulfur and (NH 4 ) 2 S, along with rapid thermal annealing (RTA) processes, were applied to mitigate these disadvantages, resulting in a marked enhancement of the electrical properties of InAs nanowires. The electron mobility of the InAs nanowires was elevated from 83.06 cm 2 /V·s to 292.718 cm 2 /V·s through the application of passivation and RTA processes. • InAs nanowires grown on Si through self-assembly growth method. • Surface treatments dramatically enhanced the electrical properties of the InAs nanowire. • The electron mobility of the InAs nanowires considerably increased via post treatment.