Suitable thickness of the adhesive layer facilitates the release of thermal stress in AlN crystals
In this work, the relation between the thickness of the adhesive layer and the thermal stress was investigated and the optimal adhesive thickness was determined by a combination of theoretical and experimental methods.
Authors
- L. Zhang (ORCID: https://orcid.org/0009-0008-7218-6402)
- Ruixian Yu
- Xiangang Xu
- Yajun Zhu (ORCID: https://orcid.org/0000-0002-5672-4126)
- Wenhao Cao (ORCID: https://orcid.org/0000-0001-9213-3705)
- Yuzhu Wu
- Shouzhi Wang (ORCID: https://orcid.org/0000-0002-7868-1833)
- Guodong Wang (ORCID: https://orcid.org/0000-0003-2122-3505)
- Jingliang Liu (ORCID: https://orcid.org/0000-0001-8165-7079)
- Lingshuang Lv
Institutions
- Shandong University (CN)
- China Electronics Technology Group Corporation (CN)
- City University of Hong Kong, Shenzhen Research Institute (CN)
- Hebei Science and Technology Department (CN)
- State Key Laboratory of Crystal Materials
Publication Details
- Journal
- CrystEngComm
- Published
- 2024-11-26
- DOI
- https://doi.org/10.1039/d4ce01000k
- Citations
- 3
- Primary Topic
- GaN-based semiconductor devices and materials
- Type
- article
- Field-Weighted Citation Impact
- 0.93