Effect of Doping and Interband Pumping on the Optical Properties of GeSi/Si Quantum Dot Nanostructures for Infrared Detectors

Nanostructures with quantum dots based on GeSi solid solution are promising for the development of optoelectronic devices compatible with modern silicon technology. In this paper, we demonstrate the capabilities of such nanostructures for detecting infrared and terahertz radiation. The working spectral range of nanostructures with GeSi/Si QDs is determined by the energy position of hole levels in the QDs, which is calculated using the quantum box model and confirmed by experimentally measuring the spectra of photoinduced intraband absorption of radiation. Using time-resolved spectroscopy, we found the characteristic times that determine the speed of the detection process associated with the processes of capture and recombination of charge carriers.