External field-engineered tunable chern number and valley-polarized quantum anomalous hall effect in Ti<sub>3</sub>S<sub>3</sub>Te<sub>2</sub> monolayer

Quantum anomalous Hall (QAH) insulators with tunable Chern numbers have excellent application prospects in spintronics.

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Publication Details

Journal
Journal of Materials Chemistry C
Published
2024-11-26
DOI
https://doi.org/10.1039/d4tc04282d
Citations
4
Primary Topic
Topological Materials and Phenomena
Type
article
Field-Weighted Citation Impact
1.35

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article

External field-engineered tunable chern number and valley-polarized quantum anomalous hall effect in Ti3S3Te2 monolayer

Xueke Yu, Xiaokang Xu, Xiaojing Yao, Huijie Lian et al.
4 citations
Journal of Materials Chemistry C
Topological Materials and Phenomena
1.35
article

External field-engineered tunable chern number and valley-polarized quantum anomalous hall effect in Ti3S3Te2 monolayer

Xueke Yu, Xiaokang Xu, Xiaojing Yao, Huijie Lian, Ai‐Lei He, Yinghui Han, Yongjun Liu, Xiuyun Zhang, Jinlian Lu
article en
4 citations

Abstract

Quantum anomalous Hall (QAH) insulators with tunable Chern numbers have excellent application prospects in spintronics.

Journal of Materials Chemistry CVol. 13(5)
Yancheng Institute of Technology (CN), Yangzhou University (CN), Hebei Normal University (CN)
National Natural Science Foundation of China, Six Talent Peaks Project in Jiangsu Province
Openalex Percentile: Top 19%
Topological Materials and Phenomena
1.35
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