Sidewall defect suppression of 620 nm AlGaInP-based red µLED devices using HfO<sub>2</sub> ALD passivation
Micro light-emitting diodes (µLEDs), crucial for advanced displays and communication systems, face efficiency challenges due to sidewall defects. This study investigates the impact of various passivation layers, including SiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>, and HfO<sub>2</sub>, on AlGaInP-based 620 nm red µLEDs. We fabricated devices with two mesa sizes and demonstrated that atomic layer deposition (ALD) passivation, especially with HfO<sub>2</sub>, significantly enhances performance. HfO<sub>2</sub> passivation shows improvement in external quantum efficiency (EQE) by up to 57.9% for a 13 × 20 µm<sup>2</sup> device size and 43.9% for a 26 × 40 µm<sup>2</sup> device size, compared to µLEDs with SiO<sub>2</sub>. Furthermore, it reduces surface recombination velocity (SRV) by 19.7% compared to SiO<sub>2</sub>. These findings highlight the potential of HfO<sub>2</sub>, via ALD, in advancing µLED technology by improving efficiency and performance through effective defect mitigation.
Authors
- Ming-June Wu
- Yi‐Tzu Tseng
- Chao‐Hsin Wu (ORCID: https://orcid.org/0000-0001-7849-773X)
- Yun-Cheng Yang (ORCID: https://orcid.org/0000-0003-0022-1295)
- Chia-An Lee (ORCID: https://orcid.org/0000-0001-9473-6411)
- Conway Yee (ORCID: https://orcid.org/0000-0002-6091-3405)
- Natchanon Prechatavanich (ORCID: https://orcid.org/0009-0003-9737-2635)
- Kuan‐Heng Lin
- Theeradech Sutheebanjerd
Institutions
- AU Optronics (Taiwan) (TW)
Publication Details
- Journal
- Optics Letters
- Published
- 2024-11-26
- DOI
- https://doi.org/10.1364/ol.543122
- Citations
- 5
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 1.04
Funders
- National Taiwan University
- AU Optronics