Electrically and magnetically readable memory with a graphene/1T-CrTe ₂ heterostructure: anomalous Hall transistor

Using first-principles theoretical analysis, we demonstrate the spin-polarized anomalous Hall conductivity (AHC) response of a 2D vdW heterostructure of graphene and ferromagnetic CrTe₂ that can be controlled with a perpendicular electric field <i>E</i>. The origins of AHC and linear magnetoelectric responses are traced to (a) the transfer of electronic charge from graphene to ferromagnetic CrTe₂ causing an out-of-plane electric polarization <i>P</i> = 1.69 μC cm^-2 and (b) the crystal field and spin-split Dirac points of graphene. Through <i>H</i>' = -<i>VP</i>·<i>E</i> coupling, <i>E</i> controls the charge transfer, magnetization and carrier density, switching the spin-polarized Berry curvature as the Fermi energy crosses the split Dirac points of graphene. Based on these, we propose an Anomalous Hall Transistor (AHT) that exploits electronic spin and charge to store binary information, opening up a route to quantum devices based on quantum geometry and magnetoelectric transport.