High-Performance Memristive Synapse Based on Space-Charge-Limited Conduction in LiNbO3

Advancing neuromorphic computing technology requires the development of versatile synaptic devices. In this study, we fabricated a high-performance Al/LiNbO₃/Pt memristive synapse and emulated various synaptic functions using its primary key operating mechanism, known as oxygen vacancy-mediated valence charge migration (V_O-VCM). The voltage-controlled V_O-VCM induced space-charge-limited conduction and self-rectifying asymmetric hysteresis behaviors. Moreover, the device exhibited voltage pulse-tunable multi-state memory characteristics because the degree of V_O-VCM was dependent on the applied pulse parameters (e.g., polarity, amplitude, width, and interval). As a result, synaptic functions such as short-term memory, dynamic range-tunable long-term memory, and spike time-dependent synaptic plasticity were successfully demonstrated by modulating those pulse parameters. Additionally, simulation studies on hand-written image pattern recognition confirmed that the present device performed with high accuracy, reaching up to 95.2%. The findings suggest that the V_O-VCM-based Al/LiNbO₃/Pt memristive synapse holds significant promise as a brain-inspired neuromorphic device.