Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Tunnel magnetoresistance (TMR) ratio is a key parameter characterizing the performance of a magnetic tunnel junction (MTJ), and a large TMR ratio is essential for the practical application of it. Generally, the traditional solutions to increasing the TMR ratio are to choose different material combinations as the ferromagnetic (FM) leads and nonmagnetic tunnel barrier. In this work, we study an architecture of MTJs of “FM/barrier/FM/barrier/FM” with double barriers, in contrast to the traditional single barrier structure “FM/barrier/FM.” We first analytically show that double barrier MTJ will generally have much higher TMR ratio than the single barrier MTJ and then substantiate it with the well-known example of “Fe/MgO/Fe” MTJ. Based on density functional calculations combined with nonequilibrium Green's function technique for quantum transport study, in the single barrier “Fe/MgO/Fe” MTJ, the TMR ratio is obtained as 122%, while in the double barrier “Fe/MgO/Fe/MgO/Fe” MTJ, it is greatly increased to 802%, suggesting that double barrier design can greatly enhance the TMR and can be taken into consideration in the design of MTJs.

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Publication Details

Journal
Applied Physics Letters
Published
2024-11-25
DOI
https://doi.org/10.1063/5.0235559
Citations
7
Primary Topic
Magnetic properties of thin films
Type
article
Field-Weighted Citation Impact
2.36

Funders

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article

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Shili Yang, Weiyang Wang, Xiaohong Zheng, Lei Zhang et al.
7 citations
Applied Physics Letters
Magnetic properties of thin films
2.36
article

Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance

Shili Yang, Weiyang Wang, Xiaohong Zheng, Lei Zhang, Chun-Sheng Liu, Zhifan Zheng
article en
7 citations

Abstract

Tunnel magnetoresistance (TMR) ratio is a key parameter characterizing the performance of a magnetic tunnel junction (MTJ), and a large TMR ratio is essential for the practical application of it. Generally, the traditional solutions to increasing the TMR ratio are to choose different material combinations as the ferromagnetic (FM) leads and nonmagnetic tunnel barrier. In this work, we study an architecture of MTJs of “FM/barrier/FM/barrier/FM” with double barriers, in contrast to the traditional single barrier structure “FM/barrier/FM.” We first analytically show that double barrier MTJ will generally have much higher TMR ratio than the single barrier MTJ and then substantiate it with the well-known example of “Fe/MgO/Fe” MTJ. Based on density functional calculations combined with nonequilibrium Green's function technique for quantum transport study, in the single barrier “Fe/MgO/Fe” MTJ, the TMR ratio is obtained as 122%, while in the double barrier “Fe/MgO/Fe/MgO/Fe” MTJ, it is greatly increased to 802%, suggesting that double barrier design can greatly enhance the TMR and can be taken into consideration in the design of MTJs.

Applied Physics LettersVol. 125(22)
Shangrao Normal University (CN), Nanjing Forestry University (CN), Shanxi University (CN), Nanjing University of Posts and Telecommunications (CN), State Key Laboratory of Quantum Optics and Quantum Optics Devices
National Natural Science Foundation of China
Openalex Percentile: Top 11%
Magnetic properties of thin films
2.36
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Double-barrier magnetic tunnel junctions with enhanced tunnel magnetoresistance — Shili Yang, Weiyang Wang, et al. · Applied Physics Letters (2024) | TGRS Research Map | TGRS