Removal of hydrogen by electric and polarized fields for high-performance AlGaN deep-ultraviolet-C light emitting diodes

The dehydrogenation of the Mg–H complex to increase the hole concentration is crucial for promoting the performance of ultraviolet-C light-emitting diodes (UVC-LEDs). Here, we systematically investigate the efficient removal of H atoms through combining external electric field produced by electrochemical process and polarized electric field of p-AlGaN. The measured electroluminescence spectra show the emission intensity of optimized AlGaN structure achieving a large increment of 12.5% after the H removal. Furthermore, the reliability and lifetime of UVC-LEDs are also significantly promoted by our methods. The physical mechanism of the coupling interaction between external and polarized electric fields on H removal is further elucidated through the first-principles calculations. The density of states, electrostatic potential energies, and differential charge densities of Mg–H doping AlGaN under various electric fields reveal that the charge redistributions and huge electrostatic potential difference between Mg and H atoms are responsible for the breaking of Mg–H bonds and expelling of H atoms. This work offers feasible strategy to promote the applications of AlGaN-based UVC-LEDs.

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Publication Details

Journal
Applied Physics Letters
Published
2024-11-25
DOI
https://doi.org/10.1063/5.0240920
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.00

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article

Removal of hydrogen by electric and polarized fields for high-performance AlGaN deep-ultraviolet-C light emitting diodes

Zhiming Wu, L.W. Guo, Yaping Wu, Weiqing Tang et al.
Applied Physics Letters
GaN-based semiconductor devices and materials
article

Removal of hydrogen by electric and polarized fields for high-performance AlGaN deep-ultraviolet-C light emitting diodes

Zhiming Wu, L.W. Guo, Yaping Wu, Weiqing Tang, Nan Qiao
article en

Abstract

The dehydrogenation of the Mg–H complex to increase the hole concentration is crucial for promoting the performance of ultraviolet-C light-emitting diodes (UVC-LEDs). Here, we systematically investigate the efficient removal of H atoms through combining external electric field produced by electrochemical process and polarized electric field of p-AlGaN. The measured electroluminescence spectra show the emission intensity of optimized AlGaN structure achieving a large increment of 12.5% after the H removal. Furthermore, the reliability and lifetime of UVC-LEDs are also significantly promoted by our methods. The physical mechanism of the coupling interaction between external and polarized electric fields on H removal is further elucidated through the first-principles calculations. The density of states, electrostatic potential energies, and differential charge densities of Mg–H doping AlGaN under various electric fields reveal that the charge redistributions and huge electrostatic potential difference between Mg and H atoms are responsible for the breaking of Mg–H bonds and expelling of H atoms. This work offers feasible strategy to promote the applications of AlGaN-based UVC-LEDs.

Applied Physics LettersVol. 125(22)
Xiamen University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 87%
GaN-based semiconductor devices and materials
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