Exploring the Potential of Hafnium Oxide-Based Ferroelectric Memories for Next-Generation Storage Class Memories

Hafnium oxide (<tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$\text{HfO}_{2}$</tex>) -based ferroelectric memories are emerging as appealing candidates for storage class memory (SCM) applications due to their scalability, low energy consumption, and compatibility with complementary-metal-oxide-semiconductor (CMOS) technology. Their strong ferroelectric properties at nanoscale thicknesses make them suitable for high-density memory, effectively bridging the gap between volatile and non-volatile storage. Key factors influencing their performance include the selection of dopants, the quality of the interfaces, defect management, and overall reliability, all of which impact endurance, retention, and the device's stability.