Enhanced Condition Assessment of IGBTs Through 3D Segmented Reconstruction Simulation

The condition assessment method of the Insulated Gate Bipolar Transistor (IGBT) devices is investigated in this paper. Simulation models in 2D and 3D are constructed based on the finite element models, and the differences between the two models are compared. To improve the accuracy of the 2D model and meet the requirements of digital twin technology, based on the 3D simulation physical model to correct the 2D computational results, the 3D segmented reconstruction method was proposed. By constructing a mathematical model, the output results of the 2D and 3D models were segmented and fitted to derive the corresponding relationship formulas for each segment. Using these formulas to optimize the computational results of the 2D model significantly improved the simulation speed while ensuring high accuracy, meeting the real-time and accuracy requirements of digital twin technology.