A 1-V Wide Swing Image Sensor With Simultaneous Energy Harvesting and Imaging Modes for IoT Applications

Image sensors with energy-harvesting capabilities aid in the development of self-powered Internet of Things (IoT) nodes. By achieving simultaneous energy harvesting and imaging, these image sensors make it possible to eliminate batteries and directly achieve self-powered operation. The article proposes a 1-V wide swing image sensor with simultaneous energy harvesting and imaging modes. The proposed pixel utilizes a vertical n+/p-well/DNW/P-sub structures as the photodiode based on a standard 180-nm CMOS mixed-signal process. The n+/p-well is used for imaging, while the p-well/DNW and DNW/P-sub are used for energy harvesting with p-well and P-sub shorted together. Moreover, a traditional 4T pixel has been improved by using CMOS pairs as the switches and zero-threshold NMOS as the source follower. The rail-to-rail pixel output swing can be achieved. An image sensor with simultaneous energy harvesting and imaging modes, which consists of a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$32\times 32$ </tex-math></inline-formula> pixel array, a controller, and a dual-channel PWM quantizer, has been designed and fabricated. Measurement results show that the average power consumption of the image sensor is approximately 899.6 nW with 25 fps at 3 klx. The proposed image sensor has a DR of 47.3 dB under a 1-V supply. The measured power generated by energy harvesting while maintaining imaging functionality is 194 pW/lx/mm2.

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Publication Details

Journal
IEEE Sensors Journal
Published
2024-11-25
DOI
https://doi.org/10.1109/jsen.2024.3498073
Citations
2
Primary Topic
CCD and CMOS Imaging Sensors
Type
article
Field-Weighted Citation Impact
0.42

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article

A 1-V Wide Swing Image Sensor With Simultaneous Energy Harvesting and Imaging Modes for IoT Applications

Kangkang Sun, Jian Guan, Yupeng Miao, Bhaskar Choubey et al.
2 citations
IEEE Sensors Journal
CCD and CMOS Imaging Sensors
0.42
article

A 1-V Wide Swing Image Sensor With Simultaneous Energy Harvesting and Imaging Modes for IoT Applications

Kangkang Sun, Jian Guan, Yupeng Miao, Bhaskar Choubey, Zhipeng Li, Yuchen Wang, Jingjing Liu, Feng Yan, Wenji Mo
article en
2 citations

Abstract

Image sensors with energy-harvesting capabilities aid in the development of self-powered Internet of Things (IoT) nodes. By achieving simultaneous energy harvesting and imaging, these image sensors make it possible to eliminate batteries and directly achieve self-powered operation. The article proposes a 1-V wide swing image sensor with simultaneous energy harvesting and imaging modes. The proposed pixel utilizes a vertical n+/p-well/DNW/P-sub structures as the photodiode based on a standard 180-nm CMOS mixed-signal process. The n+/p-well is used for imaging, while the p-well/DNW and DNW/P-sub are used for energy harvesting with p-well and P-sub shorted together. Moreover, a traditional 4T pixel has been improved by using CMOS pairs as the switches and zero-threshold NMOS as the source follower. The rail-to-rail pixel output swing can be achieved. An image sensor with simultaneous energy harvesting and imaging modes, which consists of a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$32\times 32$ </tex-math></inline-formula> pixel array, a controller, and a dual-channel PWM quantizer, has been designed and fabricated. Measurement results show that the average power consumption of the image sensor is approximately 899.6 nW with 25 fps at 3 klx. The proposed image sensor has a DR of 47.3 dB under a 1-V supply. The measured power generated by energy harvesting while maintaining imaging functionality is 194 pW/lx/mm2.

IEEE Sensors JournalVol. 25(1)
Sun Yat-sen University (CN), University of Siegen (DE), Henan Normal University (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 36%
CCD and CMOS Imaging Sensors
0.42
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