2-inch SiC solution growth using SiC liner crucible fabricated by reactive infiltration

Authors

Takeshi Mitani (ORCID: https://orcid.org/0000-0002-4228-1707)
Didier Chaussende (ORCID: https://orcid.org/0000-0002-4180-8749)
Sakiko Kawanishi (ORCID: https://orcid.org/0000-0002-3719-3788)
Takeshi Yoshikawa (ORCID: https://orcid.org/0000-0003-1991-0840)
Sora Ashimoto

Institutions

Kyoto University (JP)
Science et Ingénierie des Matériaux et Procédés (FR)
National Institute of Advanced Industrial Science and Technology (JP)
The University of Osaka (JP)

Publication Details

Journal: SPIRE - Sciences Po Institutional REpository
Published: 2024-09-18
Primary Topic: Silicon Carbide Semiconductor Technologies
Type: article
Field-Weighted Citation Impact: 0.00

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article

2-inch SiC solution growth using SiC liner crucible fabricated by reactive infiltration

Takeshi Mitani, Didier Chaussende, Sakiko Kawanishi, Takeshi Yoshikawa et al.

Sep 18, 2024

SPIRE - Sciences Po Institutional REpository

Silicon Carbide Semiconductor Technologies

article

2-inch SiC solution growth using SiC liner crucible fabricated by reactive infiltration

Takeshi Mitani, Didier Chaussende, Sakiko Kawanishi, Takeshi Yoshikawa, Sora Ashimoto

September 18, 2024article en

Abstract

No abstract available for this paper.

SPIRE - Sciences Po Institutional REpository

Kyoto University (JP), Science et Ingénierie des Matériaux et Procédés (FR), National Institute of Advanced Industrial Science and Technology (JP), The University of Osaka (JP)

Openalex Percentile: Top 81%

Silicon Carbide Semiconductor Technologies

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