Hexagonal ZnO microdisk grown by mist chemical vapor deposition on c-plane sapphire substrate and lasing actions

Abstract Hexagonal ZnO microdisks were grown by mist CVD for 6 h. The microdisks when viewed from the top were typically hexagonal with diameters of a few micrometers, and their typical three-dimensional shape was a hexagonal pyramid. Sharp peaks appeared in the RT photoluminescence (PL) spectra observed from a single hexagonal ZnO microdisk under high optically pumped conditions, and they are assumed to correspond to lasing actions. We also examined the temperature dependence of these sharp peaks in the PL spectra.

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Publication Details

Journal
Japanese Journal of Applied Physics
Published
2024-11-25
DOI
https://doi.org/10.35848/1347-4065/ad971a
Primary Topic
GaN-based semiconductor devices and materials
Type
article
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Hexagonal ZnO microdisk grown by mist chemical vapor deposition on c-plane sapphire substrate and lasing actions

Masaru Sakai, Kazuhiko Hara, Tetsuya Kouno, Kodai Kato et al.
Japanese Journal of Applied Physics
GaN-based semiconductor devices and materials
article

Hexagonal ZnO microdisk grown by mist chemical vapor deposition on c-plane sapphire substrate and lasing actions

Masaru Sakai, Kazuhiko Hara, Tetsuya Kouno, Kodai Kato, Yuki Yamazaki
article en

Abstract

Abstract Hexagonal ZnO microdisks were grown by mist CVD for 6 h. The microdisks when viewed from the top were typically hexagonal with diameters of a few micrometers, and their typical three-dimensional shape was a hexagonal pyramid. Sharp peaks appeared in the RT photoluminescence (PL) spectra observed from a single hexagonal ZnO microdisk under high optically pumped conditions, and they are assumed to correspond to lasing actions. We also examined the temperature dependence of these sharp peaks in the PL spectra.

Japanese Journal of Applied PhysicsVol. 63(12)
Shizuoka University (JP), University of Yamanashi (JP)
Openalex Percentile: Top 87%
GaN-based semiconductor devices and materials
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