Rocksalt-structured MgZnO-based UV-C lamp emitting in 190–220 nm spectral range using 146 nm line of Kr<sub>2</sub>* generated by dielectric barrier discharge

Abstract Rocksalt (RS)-structured Mg 0.97 Zn 0.03 O polycrystalline film, which was grown on a quartz glass substrate with the hot-wall-type mist chemical vapor deposition method, exhibited a vacuum ultraviolet photoluminescence at 6.39 eV (194 nm) at 300 K. The film was then used as the emission layer of a spot-irradiation lamp that had the 146 nm line of a Kr 2 ∗ excimer lamp as an excitation source. The UV-C lamp exhibited a distinct peak at 6.14 eV (202 nm) spreading over a range of 190–220 nm. The result is the first demonstration of a RS-MgZnO-based UV-C lamp.

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Publication Details

Journal
Applied Physics Express
Published
2024-11-25
DOI
https://doi.org/10.35848/1882-0786/ad9703
Citations
1
Primary Topic
GaN-based semiconductor devices and materials
Type
article
Field-Weighted Citation Impact
0.31

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article

Rocksalt-structured MgZnO-based UV-C lamp emitting in 190–220 nm spectral range using 146 nm line of Kr2* generated by dielectric barrier discharge

Kotaro Ogawa, Tomohiro Yamaguchi, Kentaro Kaneko, Go Kobayashi et al.
1 citations
Applied Physics Express
GaN-based semiconductor devices and materials
0.31
article

Rocksalt-structured MgZnO-based UV-C lamp emitting in 190–220 nm spectral range using 146 nm line of Kr2* generated by dielectric barrier discharge

Kotaro Ogawa, Tomohiro Yamaguchi, Kentaro Kaneko, Go Kobayashi, Shizυo Fujita, Takeyoshi Onuma, Izumi Serizawa, Wataru Kosaka, Tohru Honda, Hiroya Kusaka, Hideki Yajima, Toshiki Mitomi
article en
1 citations

Abstract

Abstract Rocksalt (RS)-structured Mg 0.97 Zn 0.03 O polycrystalline film, which was grown on a quartz glass substrate with the hot-wall-type mist chemical vapor deposition method, exhibited a vacuum ultraviolet photoluminescence at 6.39 eV (194 nm) at 300 K. The film was then used as the emission layer of a spot-irradiation lamp that had the 146 nm line of a Kr 2 ∗ excimer lamp as an excitation source. The UV-C lamp exhibited a distinct peak at 6.14 eV (202 nm) spreading over a range of 190–220 nm. The result is the first demonstration of a RS-MgZnO-based UV-C lamp.

Applied Physics ExpressVol. 17(12)
Kogakuin University (JP), Kyoto University (JP), Kyoto Katsura Hospital (JP)
Japan Society for the Promotion of Science
Openalex Percentile: Top 41%
GaN-based semiconductor devices and materials
0.31
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