Scanning Microwave Impedance Microscopy for Characterization of Graphene Systems Encapsulated by Hexagonal Boron Nitride

Scanning microwave impedance microscopy (sMIM) is a near‐field technique that enables the characterization of conductive materials with a resolution down to 1 nm. In hexagonal boron nitride (hBN)‐encapsulated devices, microwaves emitted from the sMIM tip penetrate and reach with the underlying 2D materials, allowing for the mapping of local conductivity variations. Using twisted bilayer graphene, it is demonstrated that this technique can characterize moiré patterns through hBN flakes up to 2.5 nm thick. Additionally, it is showed that sMIM can distinguish between conductive and insulating materials in samples encapsulated by hBN layers exceeding 15 nm. A key finding is that signal decay due to encapsulation is intrinsically linked to the tip's condition. This work overcomes limitations in the application of twistronics, enabling the verification of the periodicity of moiré patterns in high‐quality encapsulated devices between electrical contacts.