Ultracompact and broadband Si<sub>3</sub>N<sub>4</sub> Y-branch splitter using an inverse design method

An effective inverse design method is used to demonstrate an ultracompact and broadband silicon nitride Y-branch 3-dB power splitter. Its topology is determined by a continuously varying function inspired by the universal approximation theorem for neural networks. The proposed model ensures an adiabatic mode transition in an extremely compact area. Our designs are validated on a commercial foundry photonic platform with 248 nm deep UV lithography. Experimental results demonstrate that the fabricated device features an excess loss of less than 0.15 dB (0.17 dB) at 1550 nm wavelength and splitting imbalance of about 0.4 dB (1.47 dB) from 1480 nm to 1640 nm for the TE (TM) mode, covering S+C+L+U band. The device footprint is only 2.3 µm × 5.2 µm, an order of magnitude smaller than typical silicon nitride power splitters.

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Publication Details

Journal
Optics Express
Published
2024-11-25
DOI
https://doi.org/10.1364/oe.542341
Citations
12
Primary Topic
Microwave Engineering and Waveguides
Type
article
Field-Weighted Citation Impact
2.50
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Ultracompact and broadband Si3N4 Y-branch splitter using an inverse design method

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article

Ultracompact and broadband Si3N4 Y-branch splitter using an inverse design method

Keyang Zhang, Chifeng Song, Zhihan Zhang, Zhenhua Ni, Junpeng Lü, Li Liu, Haoran Wang, Jianan Chen, Tong Lin, Shihua Chen
article en
12 citations

Abstract

An effective inverse design method is used to demonstrate an ultracompact and broadband silicon nitride Y-branch 3-dB power splitter. Its topology is determined by a continuously varying function inspired by the universal approximation theorem for neural networks. The proposed model ensures an adiabatic mode transition in an extremely compact area. Our designs are validated on a commercial foundry photonic platform with 248 nm deep UV lithography. Experimental results demonstrate that the fabricated device features an excess loss of less than 0.15 dB (0.17 dB) at 1550 nm wavelength and splitting imbalance of about 0.4 dB (1.47 dB) from 1480 nm to 1640 nm for the TE (TM) mode, covering S+C+L+U band. The device footprint is only 2.3 µm × 5.2 µm, an order of magnitude smaller than typical silicon nitride power splitters.

Optics ExpressVol. 32(26)
Southeast University (BD)
Openalex Percentile: Top 10%
Microwave Engineering and Waveguides
2.50
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